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| MITSUBISHI LASER DIODES ML7XX32 SERIES Notice: Some parametric limits are subject to change 10Gbps InGaAsP DFB LASER DIODE TYPE NAME ML792E32/ML792H32 APPLICATION 10Gbps Ethernet/Short Reach DESCRIPTION ML7XX32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm. /4 phase shifted grating structure is employed to obtain excellent SMSR performance under 10Gbps modulation. Furthermore, ML7XX32 is able to operate in the wide temperature range from 0 oC to 85 oC without temperature control. ***S pecification Note Type ML792E32-01 ML792H32-01 Matching Resistance :Rs 42 1 ohm FEATURES /4 phase shifted grating structure Wide temperature range operation ( 0 oC to 85 oC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 15GHz) Chip-on-carrier ABSOLUTE MAXIMUM RATINGS Symbol If VRL Tc Tstg P arameter Laser forward current Laser reverse voltage Operation temperature Storage temperature Conditions Ratings 120 2 0 ~ +85 -40 ~+100 Unit mA V o C C o ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25 C) o Symbol Ith Iop Vop p SMSR fr tr tf P arameter Threshold current Operation current Operating voltage Slope efficiency P eak wavelength Side mode suppression ratio Beam divergence angle (parallel) Resonance frequency Rise time(20%-80%) Fall time(20%-80%) CW Conditions Min. 0.20 1290 35 - Limits Typ. 9 30 30 70 1.1 0.25 1310 45 25 30 15 30 30 Max . 20 40 40 90 1. 8 1330 40 45 40 40 Unit mA mA mA mA V mW/mA nm dB d eg. d eg. GHz psec CW,Tc=85 C o CW,Po=5mW CW,Po=5mW,Tc=85 oC CW,Po=5mW CW,Po=5mW CW,Po=5mW,Tc= 0 oC ~ +85 oC CW,Po=5mW,Tc= 0 oC ~ +85 oC CW,Po=5mW 10Gbps, Ex=7dB, Vpp=2.0V 10Gbps, Ex=7dB, Vpp=2.0V 4th order Bessel - Thompson Filter (perpendicular) CW,Po=5mW MITSUBISHI ELECTRIC Mar. 2003 MITSUBISHI LASER DIODES ML7XX32 SERIES 10Gbps InGaAsP DFB-LASER DIODE OUTLINE DRAWINGS Beam Point ML792E32 (2) Rs Rs Beam Point (1) Case 2.1 0.05 ML792H32 Beam Point (2) Rs Rs Rs (1) Case Beam Point 2.1 0.05 MITSUBISHI ELECTRIC Mar. 2003 |
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